Ujt Characteristics Circuit Diagram. The pn emitter to base junction is shown as diode d1. The simplified equivalent circuit is shown below.
Ujt relaxation oscillator circuit diagram. The device has only one pn junction and hence it is known as uni junction transistor. Fig 5 3 characteristics of ujt here up to the peak point the diode is reverse biased and hence the region to the left of the peak point is called cut off region.
From figure it is noted that for emitter potentials to the left of peak point emitter current i e never exceeds i eo.
The emitter is strongly doped with p impurities and the n region weakly doped with n impurities. The lead extending from the p type material is the emitter e. From figure it is noted that for emitter potentials to the left of peak point emitter current i e never exceeds i eo. Through equation the triggering voltage level of the emitter can be expressed as.
