Silicon Controlled Rectifier. The heavy threaded stud attaches the device to a heatsink to dissipate heat. A silicon controlled rectifier is a 3 terminal and 4 layer semiconductor current controlling device.
The principle of four layer p n p n switching was developed by moll tanenbaum goldey and holonyak of bell laboratories in 1956. Like a diode scr is a unidirectional device that allows the current in one direction and opposes in another direction. The heavy threaded stud attaches the device to a heatsink to dissipate heat.
Nte electronics nte5402 silicon controlled rectifier to92 plastic package 0 8 amp sensitive gate 200µa dc gate trigger current 100v repetitive peak reverse off state voltage 7 38 7.
Silicon controlled rectifier consists of three terminals anode cathode and gate unlike the two terminal diode anode and cathode rectifier. Scrs are mainly used in electronic devices that require control of high voltage and power. The name silicon controlled rectifier is general electric s trade name for a type of thyristor. A silicon controlled rectifier is a 3 terminal and 4 layer semiconductor current controlling device.
