Pn Junction Diode Characteristics Circuit Diagram. However with further increase in reverse voltage the current shows a rapid rise at a certain value. It is the reverse saturation current.
How are these circuits used to study the v i characteristics of a silicon diode. A junction is formed between the p type and n type layers. But when v exceeds v th the current suddenly becomes very high.
Semiconductors contain two types of mobile charge carriers holes and electrons.
In a p n junction diode we will consider the p n junction with a forward bias voltage employed. Semiconductors contain two types of mobile charge carriers holes and electrons. When v is negative and less than v th the current is minimal. When v is positive the junction is forward biased and when v is negative the junction is reverse biased.
